We demonstrate long range capacitive coupling in 2D arrays of gate-induced quantum dots in silicon nanowire field-effect transistors fabricated using a fully depleted silicon-on-insulator (FD-SOI) process. We show how such the capacitive coupling of quantum dots within a 2 × 2 array can be extended across two parallel silicon nanowires using shared, electrically isolated, “floating” electrodes. Our results open a path to generate 2D coupled quantum dot arrays using industrial technology, a requirement for implementing quantum error correction codes.
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